Fa'apolofesa fa'ameamea lanumeamata carbide micro powder grit gaosi oloa.E faʻaaogaina le siphon method grading technology, e mafai ona maua ai fatuga sili ona lelei ile 0.5um ile micro powder alamanuia.
O le paʻu o le carbide silicon lanumeamata e ave ai le suauʻu coke ma silica maualuga e fai ma mea autu, faʻaopoopo le masima laulau e fai ma faʻaopoopoga, gaosia e ala i le faʻafefeteina i se vevela maualuga e uiga i le 2200 ℃ e ala i le ogaumu tetee.O le maaa o le lanumeamata silicon carbide micro grit o loʻo i le va o corundum ma taimane, malosi faʻainisinia e maualuga atu nai lo corundum.I le faʻaopoopoga i le faʻaogaina o le carbide sima, tioata, ceramics ma mea e le o ni metallic, e mafai foi ona faʻaogaina mea semiconductor, elemene faʻavevela silicon carbide vevela, mea faʻapipiʻi puna mamao-infrared, ma isi.
I le avea ai ma vaifofo pito i luga o la matou falegaosimea, ua faʻataʻitaʻiina a matou faʻasologa o fofo ma maua ai matou faʻamaonia faʻamaonia.Mo fa'aopoopoga fa'aopoopo ma fa'amatalaga lisi o mea, fa'amolemole kiliki le ki e maua ai fa'amatalaga fa'aopoopo.
Fa'amatalaga | 240#, 280#, 320#, 360#, 400#, 500#, 600#, 700#, 800#, 1000#, 1200#, 1500#, 2000#, 2500#, 3000#, 600# , 8000#, 10000#, 12500# | ||
Saito | Su'ega vaila'au(%) | ||
SiC | FC | Fe2O3 | |
240#-2000# | ≥99 | ≤0.30 | ≤0.20 |
2500#-4000# | ≥98.5 | ≤0.50 | ≤0.30 |
6000#-12500# | ≥98.1 | ≤0.60 | ≤0.40 |
1. Otiotiina ma oloina le la'au mama, semiconductor wafers, ma quartz chips.
2. Polesi o tioata ma saito uʻamea mama.
3.Precision polishing ma sandblasting o ceramics ma uamea faapitoa.
4.Cutting, fa'amalo fua ma fa'amalo o mea fa'apipi'i ma fa'apipi'iina.
5. oloina mea e le u'amea pei o tioata, maa, agate ma le tulaga maualuga iasepi jewellery.
6. Fausiaina o mea refractory alualu i luma, enisinia ceramics, elemene vevela ma elemene malosiaga vevela, ma isi.
Afai ei ai ni au fesili.Faamolemole lagona le saoloto e faʻafesoʻotaʻi i matou.